MOVPE grown self-assembled Sb-based quantum dots assessed by means of AFM and TEM

Author

Möck, P. ; Booker, G.R. ; Mason, N.J. ; Alphandery, E. ; Nicholas, R.J.

Volume

147

Issue

3

fYear

2000

fDate

6/1/2000 12:00:00 AM

Firstpage

209

Lastpage

215

Abstract

Self-assembled Sb-based quantum dots (QDs) were grown by metal-organic vapour phase epitaxy and assessed by means of atomic force microscopy, transmission electron microscopy and photoluminescence. Two series of InSb QDs in a GaSb matrix were grown at 490±10°C and luminance in the mid-infrared at about 1.7 μm. Reductions in the III/V ratio and growth rate as used for the second series resulted in a change of the morphology of the InSb islands from hillocks without facets and a low level of order, to dumbbell shaped islands with distinct facets and a higher level of order. Self-assembled GaSb islands were grown on GaAs at 550°C and assessed for comparison by means of AFM

Keywords

MOCVD; atomic force microscopy; indium compounds; island structure; photoluminescence; self-assembly; semiconductor quantum dots; transmission electron microscopy; vapour phase epitaxial growth; 1.7 mum; 490 C; 550 C; AFM; GaSb; GaSb matrix; III/V ratio; InSb; InSb QDs; InSb islands; MOVPE grown; Sb-based quantum dots; TEM; atomic force microscopy; dumbbell shaped islands; growth rate; luminance; metal-organic vapour phase epitaxy; mid-infrared; morphology; photoluminescence; self-assembled; self-assembled GaSb islands; transmission electron microscopy;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:20000615

Filename

860920