• DocumentCode
    1373039
  • Title

    Fabrication of ZnO-based film bulk acoustic resonator devices using W/SiO2 multilayer reflector

  • Author

    Yoon, Giwan ; Park, Jae-Don

  • Author_Institution
    Information & Commun. Univ., Taejon, South Korea
  • Volume
    36
  • Issue
    16
  • fYear
    2000
  • fDate
    8/3/2000 12:00:00 AM
  • Firstpage
    1435
  • Lastpage
    1437
  • Abstract
    A ZnO-based film bulk acoustic resonator (FBAR) with a W/SiO2 multilayer reflector has been fabricated using a two-step ZnO deposition. The FAR showed a large return loss of 35 dB at ~2 GHz and a high quality factor (high-Q) of ~4000. The resonance characteristics depended largely on the multilayer reflector and ZnO film
  • Keywords
    Q-factor; acoustic resonators; acoustic wave reflection; bulk acoustic wave devices; piezoelectric thin films; silicon compounds; tungsten; zinc compounds; 2 GHz; 35 dB; W-SiO2; W/SiO2 multilayer reflector; ZnO; ZnO film bulk acoustic resonator device; fabrication; quality factor; return loss; two-step deposition;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20000986
  • Filename
    862193
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1373039