A TDC-based 4×128 CMOS SPAD array for time-gated Raman spectroscopy

Author

Nissinen, I. ; Nissinen, J. ; Holma, J. ; Kostamovaara, J.

Author_Institution

Dept. of Electr. Eng., Univ. of Oulu, Oulu, Finland

fYear

2014

fDate

22-26 Sept. 2014

Firstpage

139

Lastpage

142

Abstract

A 4×128 CMOS SPAD array has been designed and tested for a time-gated Raman spectroscopy. The SPAD array includes a 3-bit TDC for each of the SPAD elements (512). The TDC is designed to have 78 ps resolution in the first four bins for the accurate time position measurement of the Raman photons. The resolution is degraded for the last four bins used for fluorescence and background correction to achieve larger dynamic range. The timing skew of the bins of the TDC along spectral axis was measured to be ± 70 ps with 7 ps variation (sigma) in the bin widths.

Keywords

CMOS integrated circuits; Raman spectra; avalanche diodes; position measurement; time measurement; time-digital conversion; CMOS SPAD array; Raman photon; TDC; single photon avalanche diode; time 7 ps; time 78 ps; time position measurement; time-gated Raman spectroscopy; time-to-digital converter; word length 3 bit; Arrays; Delay lines; Fluorescence; Measurement by laser beam; Photonics; Raman scattering; Timing; Raman spectroscopy; SPAD; time gating; time interval measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

European Solid State Circuits Conference (ESSCIRC), ESSCIRC 2014 - 40th

Conference_Location

Venice Lido

ISSN

1930-8833

Print_ISBN

978-1-4799-5694-4

Type

conf

DOI

10.1109/ESSCIRC.2014.6942041

Filename

6942041