• DocumentCode
    1376022
  • Title

    Procedure for inverse modelling of GaAs/AlGaAs HEMT structures from DC I/V characteristic curves

  • Author

    Mahon, S.J. ; Skellern, D.J.

  • Author_Institution
    Macquarie Univ., NSW, Australia
  • Volume
    27
  • Issue
    1
  • fYear
    1991
  • Firstpage
    81
  • Lastpage
    82
  • Abstract
    A procedure for the inverse modelling of GaAs/AlGaAs HEMT structures from DC I/V characteristic curves is reported. This procedure allows important structural parameters, including the aluminium fraction, dopant density, dopant layer thickness, physical gate length and source resistance to be accurately obtained.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; semiconductor device models; Al fraction; DC I/V characteristic curves; GaAs-AlGaAs structures; HEMT structures; III-V semiconductors; dopant density; dopant layer thickness; inverse modelling; physical gate length; source resistance; structural parameters;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910052
  • Filename
    60817
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1376022