Radiation Effects in 3D Integrated SOI SRAM Circuits

Author

Gouker, Pascale M. ; Tyrrell, Brian ; D´Onofrio, Richard ; Wyatt, Peter ; Soares, Tony ; Hu, Weilin ; Chen, Chenson ; Schwank, James R. ; Shaneyfelt, Marty R. ; Blackmore, EwartW ; Delikat, Kelly ; Nelson, Marty ; McMarr, Patrick ; Hughes, Harold ; Ahlbin

Author_Institution

MIT Lincoln Lab., Lexington, MA, USA

Volume

58

Issue

6

fYear

2011

Firstpage

2845

Lastpage

2854

Abstract

Radiation effects are presented for the first time for vertically integrated 3 × 64-kb SOI SRAM circuits fabricated using the 3D process developed at MIT Lincoln Laboratory. Three fully-fabricated 2D circuit wafers are stacked using standard CMOS fabrication techniques including thin-film planarization, layer alignment and oxide bonding. Micron-scale dense 3D vias are fabricated to interconnect circuits between tiers. Ionizing dose and single event effects are discussed for proton irradiation with energies between 4.8 and 500 MeV. Results are compared with 14-MeV neutron irradiation. Single event upset cross section, tier-to-tier and angular effects are discussed. The interaction of 500-MeV protons with tungsten interconnects is investigated using Monte-Carlo simulations. Results show no tier-to-tier effects and comparable radiation effects on 2D and 3D SRAMs. 3DIC technology should be a good candidate for fabricating circuits for space applications.

Keywords

CMOS integrated circuits; Monte Carlo methods; SRAM chips; neutron effects; planarisation; proton effects; silicon-on-insulator; 2D SRAMs; 2D circuit wafers; 3D Integrated SOI SRAM circuits; 3D SRAMs; 3DIC technology; CMOS fabrication techniques; MIT Lincoln Laboratory; Monte Carlo simulations; angular effects; bonding; electron volt energy 4.8 MeV to 500 MeV; interconnect circuits; ionizing dose; layer alignment; micron-scale dense 3D vias; neutron irradiation; proton irradiation; radiation effects; single event effects; single event upset cross section; thin-film planarization; tier-to-tier effects; tungsten interconnects; Integrated circuit interconnections; Neutrons; Protons; Radiation effects; SRAM chips; Silicon on insulator technology; Three dimensional integrated circuits; 3D integration; SOI; fully depleted; neutron; protons; single event effects (SEEs); upset cross section;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2011.2172463

Filename

6081972