Photon counting III-V hybrid photomultipliers using transmission mode photocathodes

Author

Rue, Ross A La ; Costello, Kenneth A. ; Davis, Gary A. ; Edgecumbe, John P. ; Aebi, Verle W.

Author_Institution

Adv. Technol. Div., Intevac, Santa Clara, CA, USA

Volume

44

Issue

4

fYear

1997

fDate

4/1/1997 12:00:00 AM

Firstpage

672

Lastpage

678

Abstract

This paper reports on the development of solid-state hybrid photomultiplier tubes using high quantum efficiency, transmission mode, III-V photocathodes. The first strike low-noise gain mechanism in these devices is provided via electron bombardment of a solid-state GaAs Schottky diode. In addition, a second-stage gain is provided by solid-state avalanching within a GaAs Schottky APD (SAPD) anode. A combined gain of 2×10⁴, adequate for photon counting, is achieved. Device bandwidth, exceeding 1 GHz, is optimized by tailoring the diode anode structure. The combined traits of this device provide high quantum efficiency, large dynamic range, large bandwidth, and adequate gain for photon counting. Photon counting beyond 1 μm is feasible for a cooled device. The tube structure, diode anode structure, noise issues and preliminary photon counting results are discussed

Keywords

III-V semiconductors; Schottky diodes; photocathodes; photomultipliers; photon counting; GaAs; III-V photocathodes; Schottky diode; device bandwidth; diode anode structure; electron bombardment; hybrid photomultipliers; photon counting; quantum efficiency; second-stage gain; solid-state avalanching; transmission mode; transmission mode photocathodes; Anodes; Bandwidth; Cathodes; Dynamic range; Electrons; Gallium arsenide; III-V semiconductor materials; Photomultipliers; Schottky diodes; Solid state circuits;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.563374

Filename

563374