Microwave noise of DBRT diode over full bias voltage range

Author

Demarteau, J.I.M. ; Heyker, H.C. ; Kwaspen, J.J.M. ; van de Roer, T.G. ; Kaufmann, L.M.F.

Author_Institution

Eindhoven Univ., of Technol., Netherlands

Volume

27

Issue

1

fYear

1991

Firstpage

7

Lastpage

8

Abstract

Experimental results on the noise behaviour of a double barrier resonant tunnelling (DBRT) diode are presented. The measurement method had been developed from a standard noise figure meter calibration procedure. Measurements were performed on a stabilised DBRT diode, mounted in a reflection amplifier configuration. The actual circulator in the setup is represented by an ideal circulator and two error networks. Noise figure and noise measure of a DBRT diode at 1 and 1.5 GHz are reported. The bias voltage range includes two positive-conductance regions as well as the intermediate negative-conductance region. In the active region of a 20 mu m mesa diameter DBRT diode, the lowest noise measure observed was 5.5.

Keywords

electric noise measurement; electron device noise; microwave measurement; resonant tunnelling devices; solid-state microwave devices; tunnel diodes; 1 GHz; 1.5 GHz; 20 micron; DBRT diode; UHF; circulator; double barrier resonant tunnelling diode; error networks; full bias voltage range; mesa diameter DBRT diode; microwave noise; negative-conductance region; noise figure; positive-conductance regions; reflection amplifier configuration; standard noise figure meter calibration procedure; tunnel diode noise measurement;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19910005

Filename

60833