DocumentCode
1378323
Title
Charge pumping investigations on parasitic regions in polysilicon TFT
Author
Kim, Ohyun ; Kim, Klee-Jong
Author_Institution
Pohang Univ. of Sci. & Technol., Kyungbuk, South Korea
Volume
34
Issue
8
fYear
1998
fDate
4/16/1998 12:00:00 AM
Firstpage
809
Lastpage
811
Abstract
By comparing with the static I-V characteristics in polysilicon TFTs, it was found that the charge pumping current has four components that arise from the main channel, the channel edge and two overlap regions near the n+ and p+ contacts. ECR hydrogenation effectively passivates the trap states in the overlap regions
Keywords
MOSFET; elemental semiconductors; passivation; silicon; thin film transistors; ECR hydrogenation; Si; channel edge; charge pumping current; main channel; overlap regions; parasitic regions; passivation; polysilicon TFT; static I-V characteristics; trap states;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19980527
Filename
674939
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