Advanced selective emitter structures by laser opening technique for industrial mc-Si solar cells

Author

Ho, J.-J. ; Cheng, Y.-T. ; Liou, Jun-Jih ; Lin, Chia-Hung ; Dimitrov, D.Z. ; Hsu, Allen ; Tsai, S.-Y. ; Wang, Chao-Kuei ; Lee, Wei-Jen ; Wang, K.L.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Ocean Univ., Keelung, Taiwan

Volume

46

Issue

23

fYear

2010

Firstpage

1559

Lastpage

1561

Abstract

A laser opening technique is employed as the photolithography process to form selective emitter (SE) structures on multi-crystalline silicon (mc-Si) substrates for the large-area (156 × 156 × mm²) solar-cell industry. The best efficiency of 16.35% is obtained with the developed SE structure after a damage removal process with optimisation of heavily and lightly doped dopants, which yields a gain of 0.88% absolute compared with that of a reference cell. Significantly, the SE mc-Si solar cell without the damage removal process can also reach a gain of 0.48% absolute. The developed SE process has simplicity, reliability, is fast, cost-effective, and could be effectively applied to mass production in industrial applications.

Keywords

elemental semiconductors; laser materials processing; photolithography; silicon; solar cells; Si; damage removal process; heavily doped dopants; industrial mc-Si solar cells; laser opening technique; lightly doped dopants; multicrystalline silicon substrates; photolithography process; reference cell; selective emitter structures;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2010.2471

Filename

5635403