The current-limiting fuse as fault protection for semiconductor rectifiers

The rapid development of germanium and silicon power rectifier components in recent years has posed unique problems in fault current protection. These two types of rectifiers are characterized by the extremely high current densities tolerable in the active rectifying element at normal loads while maintaining low forward-voltage drop and thus high efficiency. For comparison purposes, full-load current densities (amperes per unit, cross-sectional area) in germanium and silicon rectifiers are approximately 1,000 times greater than in selenium and copper oxide metallic rectifiers.