Characteristics of n-Type Junctionless Poly-Si Thin-Film Transistors With an Ultrathin Channel

Author

Lin, Horng-Chih ; Lin, Cheng-I ; Huang, Tiao-Yuan

Author_Institution

Dept. of Electron. Eng. & Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

33

Issue

1

fYear

2012

Firstpage

53

Lastpage

55

Abstract

In this letter, we study the characteristics of n-type junctionless (JL) poly-Si thin-film transistors (TFTs) with an ultrathin and heavily phosphorous doped channel. The fabricated devices show excellent performance with a subthreshold swing of 240 mV/dec and an on/off current ratio of >; 10⁷. Moreover, the JL device shows 23 times increase in the on-state current at a gate overdrive of 4 V as compared with the conventional control device with an undoped channel. The significant improvement in the current drive is ascribed to the inherently high carrier concentration contained in the channel of the JL device. These results evidence the great potential of the JL poly-Si TFTs for the manufacturing of future 3-D and flat-panel electronic products.

Keywords

elemental semiconductors; flat panel displays; semiconductor doping; silicon; thin film transistors; 3D electronic products; Si; carrier concentration; current drive; flat-panel electronic products; gate overdrive; heavily phosphorous doped channel; n-type junctionless poly-Si thin-film transistors; on-off current ratio; subthreshold swing; ultrathin channel; voltage 4 V; Fabrication; Logic gates; Performance evaluation; Silicon; Thin film transistors; Very large scale integration; Junctionless (JL); poly-Si; thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2171914

Filename

6084703