A 1-GHz bipolar class-AB operational amplifier with multipath nested Miller compensation for 76-dB gain

Author

De Langen, Klaas-Jan ; Eschauzier, Rudy G H ; Van Dijk, Gert J A ; Huijsing, Johan H.

Author_Institution

Inst. for Microelectron. & Submicron Technol., Delft Univ. of Technol., Netherlands

Volume

32

Issue

4

fYear

1997

fDate

4/1/1997 12:00:00 AM

Firstpage

488

Lastpage

498

Abstract

A 1-GHz operational amplifier with a gain of 76 dB while driving a 50-Ω load is presented. The equivalent input noise voltage is as low as 1.2 nV/√Hz. This combination of extremely high bandwidth, high gain, and low noise is the result of a three-stage all-n-p-n topology combined with a multipath nested Miller compensation. Using 10-GHz f_T n-p-n transistors, the realizable bandwidth could be of the order of 2-3 GHz. However, bond-wire inductances restrict the useful bandwidth to 1 GHz. The amplifier occupies an active area of 0.26 mm² and has been realized in the bipolar part of a 1-μm BiCMOS process

Keywords

bipolar analogue integrated circuits; compensation; integrated circuit packaging; operational amplifiers; wideband amplifiers; 1 GHz; 1 micron; 50 ohm; 76 dB; BiCMOS process; active area; bandwidth; bipolar operational amplifier; bond-wire inductances; class-AB operational amplifier; equivalent input noise voltage; multipath nested Miller compensation; realizable bandwidth; three-stage all-n-p-n topology; useful bandwidth; Analog integrated circuits; Bandwidth; BiCMOS integrated circuits; Bonding; Broadband amplifiers; Circuit topology; Frequency; Gain; Low voltage; Operational amplifiers;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.563670

Filename

563670