• DocumentCode
    1379619
  • Title

    CMOS trimming circuit based on polysilicon fusing

  • Author

    Kim, O. ; Oh, C.J. ; Kim, K.S.

  • Author_Institution
    Electron. & Telecommun. Res. Inst., Daejeon, South Korea
  • Volume
    34
  • Issue
    4
  • fYear
    1998
  • fDate
    2/19/1998 12:00:00 AM
  • Firstpage
    355
  • Lastpage
    356
  • Abstract
    A trimming circuit based on a conventional CMOS process is presented. This circuit both searches the optimum conditions and writes them by blowing a polysilicon fuse. As this unit cell can be cascaded, only four pins are needed to realise the required resolutions. This circuit is implemented using standard 0.8 μm CMOS technology
  • Keywords
    CMOS integrated circuits; electric fuses; 0.8 micron; CMOS trimming circuit; Si; cascaded unit cell; polysilicon fusing;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19980320
  • Filename
    675691
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1379619