• DocumentCode
    1379757
  • Title

    Light-Weight On-Chip Monitoring Network for Dynamic Adaptation and Calibration

  • Author

    Ituero, Pablo ; López-Vallejo, Marisa ; Marcos, Miguel Ángel Sánchez ; Osuna, Carlos Gómez

  • Author_Institution
    Dept. of Electron. Eng., Univ. Politec. de Madrid, Madrid, Spain
  • Volume
    12
  • Issue
    6
  • fYear
    2012
  • fDate
    6/1/2012 12:00:00 AM
  • Firstpage
    1736
  • Lastpage
    1745
  • Abstract
    Current nanometer technologies suffer within-die parameter uncertainties, varying workload conditions, aging, and temperature effects that cause a serious reduction on yield and performance. In this scenario, monitoring, calibration, and dynamic adaptation become essential, demanding systems with a collection of multi purpose monitors and exposing the need for light-weight monitoring networks. This paper presents a new monitoring network paradigm able to perform an early prioritization of the information. This is achieved by the introduction of a new hierarchy level, the threshing level. Targeting it, we propose a time-domain signaling scheme over a single-wire that minimizes the network switching activity as well as the routing requirements. To validate our approach, we make a thorough analysis of the architectural trade-offs and expose two complete monitoring systems that suppose an area improvement of 40% and a power reduction of three orders of magnitude compared to previous works.
  • Keywords
    CMOS integrated circuits; ageing; calibration; integrated circuit reliability; integrated circuit yield; nanotechnology; network routing; time-domain analysis; aging; architectural trade-offs; calibration; dynamic adaptation; early prioritization; hierarchy level; light-weight monitoring networks; light-weight on-chip monitoring network; monitoring network paradigm; multipurpose monitors; nanometer technology; network switching activity; performance reduction; power reduction; routing requirements; temperature effects; thorough analysis; threshing level; time-domain signaling scheme; varying workload conditions; within-die parameter uncertainty; yield reduction; Calibration; Monitoring; Radiation detectors; Synchronization; Temperature measurement; Temperature sensors; Aging; complementary metal oxide semiconductor; dynamic adaptation; leakage; monitoring; on-chip; temperature;
  • fLanguage
    English
  • Journal_Title
    Sensors Journal, IEEE
  • Publisher
    ieee
  • ISSN
    1530-437X
  • Type

    jour

  • DOI
    10.1109/JSEN.2011.2176485
  • Filename
    6084809