• DocumentCode
    1379948
  • Title

    A 1-V, 16.9 ppm/ ^{\\circ} C, 250 nA Switched-Capacitor CMOS Voltage Reference

  • Author

    Hsieh, Chun-Yu ; Huang, Hong-Wei ; Chen, Ke-Horng

  • Author_Institution
    Dept. of Electr. & Control Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    19
  • Issue
    4
  • fYear
    2011
  • fDate
    4/1/2011 12:00:00 AM
  • Firstpage
    659
  • Lastpage
    667
  • Abstract
    An ultra low-power, precise voltage reference using a switched-capacitor technique in 0.35-μm CMOS is presented in this paper. The temperature dependence of the carrier mobility and channel length modulation effect can be effectively minimized by using 3.3 and 5 V N-type transistors to operate in the saturation and subthreshold regions, respectively. In place of resistors, a precise reference voltage with flexible trimming capability is achieved by using capacitors. When the supply voltage is 1 V and the temperature is 80°C, the supply current is 250 nA. The line sensitivity is 0.76%/V; the PSRR is -41 dB at 100 Hz and -17 dB at 10 MHz. Moreover, the occupied die area is 0.049 mm2.
  • Keywords
    CMOS integrated circuits; carrier mobility; low-power electronics; reference circuits; switched capacitor networks; N-type transistors; carrier mobility; channel length modulation effect; current 250 nA; frequency 10 MHz; frequency 100 Hz; line sensitivity; resistors; size 0.35 mum; switched-capacitor CMOS voltage reference; temperature 80 degC; temperature dependence; ultralow-power precise voltage reference; voltage 1 V; voltage 3.3 V; voltage 5 V; CMOS voltage reference; nanocurrent; switched-capacitor;
  • fLanguage
    English
  • Journal_Title
    Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1063-8210
  • Type

    jour

  • DOI
    10.1109/TVLSI.2009.2038061
  • Filename
    5378486