DocumentCode
1380390
Title
A CW 4-W Ka-band power amplifier utilizing MMIC multichip technology
Author
Matsunaga, Kohji ; Miura, Ikuo ; Iwata, Naotaka
Author_Institution
Kansai Electron. Res. Labs., NEC Corp., Shiga, Japan
Volume
35
Issue
9
fYear
2000
Firstpage
1293
Lastpage
1297
Abstract
This paper describes a 28-GHz power amplifier with 4.5-W output power under CW operation. The amplifier utilizes four fully matched MMICs, in which 0.35-/spl mu/m-long gate GaAs-based heterojunction FETs are employed. The developed power amplifier also provides a continuous-wave (CW) output power of 3 W over the bandwidth of 2 GHz at Ka-band.
Keywords
III-V semiconductors; JFET integrated circuits; MMIC power amplifiers; gallium arsenide; 0.35 micron; 28 GHz; 4 W; CW power amplifier; GaAs; GaAs heterojunction FET; Ka-band; MMIC multichip technology; Associate members; Broadband amplifiers; Distributed parameter circuits; FETs; Heterojunctions; Impedance; MMICs; Power amplifiers; Power generation; Power transmission lines;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.868038
Filename
868038
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