DocumentCode
1380622
Title
Enhanced Performance of Vertical GaN-Based LEDs With Highly Reflective 
-ohmic Contact and Periodic Indium–Zinc–Oxide Nano-Wells
Author
Kuo, Der-Min ; Wang, Shui-Jinn ; Uang, Kai-Ming ; Chen, Tron-Min ; Kuo, Hon-Yi ; Lee, Wei-Chi ; Wang, Pei-Ren
Author_Institution
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume
22
Issue
5
fYear
2010
fDate
3/1/2010 12:00:00 AM
Firstpage
338
Lastpage
340
Abstract
Through the use of polystyrene nano-spheres as a 2-D mask for the patterned-deposition of indium-zinc-oxide (IZO) and annealed Pt-Al-Pt as a high reflectivity p -ohmic/mirror layer, vertical GaN-LEDs with atop periodic IZO nano-wells (NW-VLEDs) were fabricated. At 350 mA, NW-VLEDs exhibited a crucial VF reduction of 0.1 V with an enhancement of 87% in light output and 92% in power conversion efficiency as compared to regular vertical GaN-LEDs, which should be attributed to the combination of the effectiveness of high-reflectivity ohmic contact, IZO current spreading layer, and the enhanced light extraction efficiency from the periodic nano-wells.
Keywords
III-V semiconductors; annealing; gallium compounds; light emitting diodes; masks; ohmic contacts; wide band gap semiconductors; 2D mask; GaN; annealing; current spreading layer; highly reflective P-ohmic contact; indium-zinc-oxide; light extraction; periodic nanowells; polystyrene nanospheres; vertical GaN LED; GaN-based; light-emitting diode (LED); nano; ohmic contact; polystyrene (PS); power conversion; reflectivity; vertical;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2009.2039641
Filename
5378587
Link To Document