Patterned Quantum Dot Molecule Laser Fabricated by Electron Beam Lithography and Wet Chemical Etching

Author

Verma, V.B. ; Reddy, U. ; Dias, N.L. ; Bassett, K.P. ; Li, X. ; Coleman, J.J.

Author_Institution

Nat. Inst. of Stand. & Technol., Boulder, CO, USA

Volume

46

Issue

12

fYear

2010

Firstpage

1827

Lastpage

1833

Abstract

We report on the fabrication and characterization of an edge-emitting semiconductor laser with a gain medium consisting of two layers of patterned, self-aligned, vertically coupled quantum dots (QDs) using a wet-etching and regrowth technique. A threshold current density of 300 A/cm² is demonstrated at 77 K. The presence of emission from QD excited states in both the spontaneous emission and laser spectra indicates 3-D quantum confinement in QDs fabricated using this technique.

Keywords

III-V semiconductors; aluminium compounds; current density; electron beam lithography; etching; gallium arsenide; indium compounds; optical fabrication; quantum dot lasers; spontaneous emission; 3D quantum confinement; GaAs-Al_0.75Ga_0.25As-GaAs-In_0.21Ga_0.79As-GaAs; edge-emitting semiconductor laser; electron beam lithography; excited states; gain medium; laser spectra; optical fabrication; patterned quantum dot molecule laser; self-aligned vertically coupled quantum dots; spontaneous emission; temperature 77 K; threshold current density; wet chemical etching; Charge carrier density; Gallium arsenide; Laser excitation; Lithography; Quantum dot lasers; Spontaneous emission; Coupled quantum dots; quantum dot laser; quantum dot molecule; quantum dots;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2010.2047246

Filename

5638348