Enhanced Extraction Efficiency of InGaN-Based Light-Emitting Diodes Using 100-kHz Femtosecond-Laser-Scribing Technology

Author

Lee, Jae-Hoon ; Kim, Nam-Seung ; Hong, Sang-Su ; Lee, Jung-Hee

Author_Institution

Manuf. Technol. Group, Samsung LED Co., Ltd., Suwon, South Korea

Volume

31

Issue

3

fYear

2010

fDate

3/1/2010 12:00:00 AM

Firstpage

213

Lastpage

215

Abstract

A femtosecond laser was focused inside a thinned sapphire substrate to scribe the substrate and separate nitride-based light-emitting diodes (LEDs). The LED scribed by using the femtosecond laser exhibits an 11% enhancement in the output power at 20 mA, compared to that scribed by using the nanosecond laser, which is attributed to the reduction in both debris and thermal damage of the sapphire substrate. Femtosecond-laser scribing also has an advantage of high-speed processing because the extremely short pulsewidth enables it to easily reach very high peak laser intensity.

Keywords

high-speed optical techniques; light emitting diodes; sapphire; semiconductor lasers; LED; debris reduction; enhanced extraction efficiency; femtosecond-laser-scribing technology; frequency 100 kHz; nanosecond laser; nitride-based light-emitting diodes; thermal damage reduction; thinned sapphire substrate; Ablation; GaN; debris; femtosecond laser; light-emitting diode (LED); nanosecond laser; pulsewidth; sapphire; scribing;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2037592

Filename

5378605