DocumentCode
1381490
Title
A CMOS pulse-shrinking delay element for time interval measurement
Author
Chen, Poki ; Liu, Shen-Iuan ; Wu, Jingshown
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume
47
Issue
9
fYear
2000
fDate
9/1/2000 12:00:00 AM
Firstpage
954
Lastpage
958
Abstract
A deep sub-nanosecond resolved CMOS pulse-shrinking delay element used in the time-to-digital converter (TDC) is proposed. The pulse shrinking capability of the element is controlled by the dimension ratio of the adjacent gates. This control mechanism is completely different from the bias adjustment adopted in the conventional pulse-shrinking element. Without the need of continuous calibration, the presented element possesses not only extremely fine resolution, small single-shot errors, low power consumption, but also good insensitivity to the supply voltage variation. Being fabricated with 0.35 μm CMOS technologies, the TDC made of the new elements has been measured to have a resolution of 68 ps. The effective resolution only varies 1.5 ps for a rather large supply voltage range from 3.5 to 4.5 V. The size of the circuit is 0.35 mm×0.09 mm only, excluding the I/O pads. Under a single 3.3-V power supply, the static power dissipation, including the I/O pads, is 1 μW. The average power consumption is measured to be merely 1.2 mW under a measurement rate of 100 ksps
Keywords
CMOS integrated circuits; analogue-digital conversion; delay circuits; pulse circuits; time measurement; 0.35 micron; 1.2 mW; 3.5 to 4.5 V; CMOS pulse shrinking delay element; time interval measurement; time-to-digital converter; CMOS technology; Calibration; Circuits; Delay effects; Energy consumption; Power measurement; Power supplies; Pulse measurements; Time measurement; Voltage;
fLanguage
English
Journal_Title
Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on
Publisher
ieee
ISSN
1057-7130
Type
jour
DOI
10.1109/82.868466
Filename
868466
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