• DocumentCode
    1382105
  • Title

    Simulation and Analysis of InGaAs Power MOSFET Performances and Reliability

  • Author

    Steighner, Jason B. ; Yuan, Jiann-shiun ; Liu, Yidong

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA
  • Volume
    58
  • Issue
    1
  • fYear
    2011
  • Firstpage
    180
  • Lastpage
    189
  • Abstract
    The new approach of implementing a laterally diffused metal-oxide-semiconductor (LDMOS) with In0.53Ga0.47As is investigated. Power device parameters such as specific on-resistance, gate charge, and breakdown voltage are examined using 2-D device simulation. Comparisons are made between In0.53Ga0.47As and Si LDMOS, showcasing the advantages of In0.53Ga0.47As LDMOS. Further ON-state analysis of the In0.53Ga0.47As LDMOS is then provided with a proposed enhanced structure that demonstrates excellent I-V characteristics.
  • Keywords
    III-V semiconductors; circuit reliability; elemental semiconductors; indium compounds; power MOSFET; silicon; 2D device simulation; I-V characteristics; InGaAs; LDMOS; Si; breakdown voltage; gate charge; laterally-diffused metal-oxide-semiconductor; on-state analysis; power MOSFET performances; power MOSFET reliability; specific on-resistance; Impact ionization; Indium gallium arsenide; Logic gates; Performance evaluation; Power MOSFET; Silicon; Breakdown voltage; InGaAs; gallium arsenide; gate charge; laterally diffused metal–oxide–semiconductor (LDMOS); power MOSFET; snapback; specific on-resistance;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2010.2089460
  • Filename
    5639041
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1382105