Enhanced Light Extraction of GaN-Based Green Light-Emitting Diodes With GaOOH Rods

Author

Lee, Hee Kwan ; Kim, Myung Sub ; Yu, Jae Su

Author_Institution

Dept. of Electron. & Radio Eng., Kyung Hee Univ., Yongin, South Korea

Volume

24

Issue

4

fYear

2012

Firstpage

285

Lastpage

287

Abstract

We reported the enhanced light extraction efficiency in InGaN/GaN multiple quantum well green light-emitting diodes (LEDs) with gallium oxide hydroxide (GaOOH) rods. The GaOOH rods were prepared by an aqueous gallium nitrate solution at 80^°C and then coated on the surface of indium tin oxide electrodes of LEDs by a simple drop coating process. The synthesized GaOOH rods indicated a rhombus-shaped rod structure with average lengths of 2 μm and lateral dimensions of 50-500 nm. For LEDs with GaOOH rods, the light output powers were increased by 24.3% and 26.4% compared to the conventional LED on patterned sapphire substrate at 20 mA and 100 mA, respectively. Also, there was no distinct degradation in electrical characteristics of LEDs with GaOOH rods.

Keywords

III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; quantum well devices; wide band gap semiconductors; GaOOH; ITO; InGaN-GaN; current 100 mA; current 20 mA; enhanced light extraction; green light emitting diode; multiple quantum well; size 50 nm to 500 nm; Coatings; Gallium nitride; Indium tin oxide; Light emitting diodes; Quantum well devices; Substrates; Surface treatment; Drop coating process; GaN-based green light-emitting diodes (LEDs); GaOOH rods; light extraction;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2011.2177455

Filename

6086713