• DocumentCode
    1382659
  • Title

    Introduction to turn-off silicon-controlled rectifiers

  • Author

    Storm, F. Herbert

  • Author_Institution
    General Electric Company, Schenectady, N. Y.
  • Volume
    82
  • Issue
    3
  • fYear
    1963
  • fDate
    7/1/1963 12:00:00 AM
  • Firstpage
    375
  • Lastpage
    383
  • Abstract
    The term ¿turn-off silicon-controlled rectifier¿ relates to a 4-layer p-n-p-n switch, which can be turned on and off by gate current pulses of opposite polarities. Conditions for gate turn-off are analyzed by the carrier charge concept. Two methods for obtaining gate turn-off are developed and experimentally verified. Turn-off current gains of 1,000, and more, were measured. An estimate is made regarding larger turn-off SCRs (silicon-controlled rectifiers) of the future, and some applications are listed.
  • fLanguage
    English
  • Journal_Title
    American Institute of Electrical Engineers, Part I: Communication and Electronics, Transactions of the
  • Publisher
    ieee
  • ISSN
    0097-2452
  • Type

    jour

  • DOI
    10.1109/TCE.1963.6373322
  • Filename
    6373322
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1382659