Full-band transport in ultra-narrow p-type Si channels: Field, orientation, strain

Author

Stanojevic, Zlatan ; Filipovic, Lado ; Baumgartner, Oskar ; Karner, M. ; Kernstock, C. ; Kosina, Hans

Author_Institution

Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria

fYear

2014

fDate

7-9 April 2014

Firstpage

142

Lastpage

144

Abstract

We present a framework for modeling the low-field mobility of ultra-narrow Si channels such as nanowires or FinFETs based on a full-band description of the electronic structure. Hole mobility is of particular interest since its calculation necessitates a full-band approach. Using cylindrical nanowires of different crystal orientation as a model for an ultra-narrow channel, we investigate the transport distribution and demonstrate the effects of orientation, bias, and strain on the mobility.

Keywords

crystal orientation; electronic structure; elemental semiconductors; hole mobility; nanowires; silicon; FinFETs; Si; crystal orientation; cylindrical nanowires; full-band transport; hole mobility; low-field mobility; nanowires; strain effect; transport distribution; ultra-narrow p-type silicon channels; Computational modeling; Logic gates; Nanowires; Phonons; Scattering; Silicon; Strain; Nanowires; full-band; k·p-method; linearized Boltzmann transport; low-field mobility; ultra-thin channels;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (ULIS), 2014 15th International Conference on

Conference_Location

Stockholm

Type

conf

DOI

10.1109/ULIS.2014.6813918

Filename

6813918