Plasma ion implantation hydrogenation of poly-Si CMOS thin-film transistors at low energy and high dose rate using an inductively-coupled plasma source

Author

Qin, Shu ; Zhou, Yuanzhong ; Nakatsugawa, Tomoya ; Husein, Imad F. ; Chan, Chung ; King, Tsu-Jae

Author_Institution

Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA

Volume

45

Issue

6

fYear

1998

fDate

6/1/1998 12:00:00 AM

Firstpage

1324

Lastpage

1328

Abstract

Defect passivation in polycrystalline silicon (poly-Si) CMOS thin-film transistors (TFT´s) has been performed by plasma ion implantation (PII) hydrogenation process. Implantation at low energy (2 keV) and high dose rate(~10¹⁶/cm² S) was achieved by an inductively-coupled plasma source. The device parameter improvements are saturated in 3-4 min, which is much shorter than other hydrogenation methods reported in the literature. The stress measurements indicate that the devices hydrogenated by this new technique have much better long-term reliability than that hydrogenated by other techniques

Keywords

MOSFET; elemental semiconductors; hydrogen; ion implantation; passivation; semiconductor device reliability; silicon; thin film transistors; 2 keV; 3 to 4 min; Si; defect passivation; device parameter improvements; dose rate; inductively-coupled plasma source; long-term reliability; plasma ion implantation hydrogenation; polysilicon CMOS thin-film transistors; stress measurements; CMOS process; Ion implantation; Microelectronics; Nuclear and plasma sciences; Plasma devices; Plasma displays; Plasma immersion ion implantation; Plasma sources; Silicon; Thin film transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.678562

Filename

678562