• DocumentCode
    1384225
  • Title

    Single spatial mode 3 μm diode lasers with continuous-wave output power of 15 mW at room temperature

  • Author

    Hosoda, T. ; Kipshidze, G. ; Shterengas, L. ; Belenky, G.

  • Author_Institution
    State Univ. of New York at Stony Brook, Stony Brook, NY, USA
  • Volume
    47
  • Issue
    24
  • fYear
    2011
  • Firstpage
    1341
  • Lastpage
    1343
  • Abstract
    Single spatial mode GaSb-based type-I quantum well diode lasers with 3 μm emission and continuous-wave output power above 15 mW at room temperature are reported. The devices with 5.5 μm-wide ridge waveguides were fabricated by selective wet etching technique.
  • Keywords
    III-V semiconductors; etching; gallium compounds; laser modes; optical waveguides; quantum well lasers; ridge waveguides; GaSb; power 15 mW; ridge waveguides; selective wet etching; single spatial mode diode lasers; size 5.5 mum; temperature 293 K to 298 K; type-I quantum well diode lasers; wavelength 3 mum;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2011.3268
  • Filename
    6088056
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1384225