Modeling of the transverse delays in GaAs MESFETs

Author

Goel, Ashok K. ; Westgate, Charles R.

Author_Institution

Dept. of Electr. Eng., Michigan Technol. Univ., Houghton, MI, USA

Volume

36

Issue

10

fYear

1988

fDate

10/1/1988 12:00:00 AM

Firstpage

1411

Lastpage

1417

Abstract

A computer-efficient algorithmd for calculating the transverse propagation delays in GaAs MESFETs is presented. The MESFET has been modeled as two lossy transmission lines coupled to each other by the gate-drain capacitances. The model is valid for MESFETs with submicron gate lengths as well and is suitable for inclusion in computer-aided design (CAD) tools. The algorithm has been used to study the dependences of the transverse propagation delays in GaAs MESFETs on the MESFET dimension and other gate parameters. Results can be used for the optimization of high-speed circuits, and, in particular, picosecond circuits

Keywords

III-V semiconductors; Schottky gate field effect transistors; delays; equivalent circuits; gallium arsenide; semiconductor device models; solid-state microwave devices; CAD; GaAs; III-V semiconductors; MESFETs; computer-aided design; computer-efficient algorithm; distributed element equivalent circuit; gate parameters; gate-drain capacitances; high speed circuit optimisation; lossy transmission lines; microwave device model; model; picosecond circuits; submicron gate lengths; transverse propagation delays; Delay effects; Electrodes; Electrons; Equivalent circuits; Frequency; Gallium arsenide; MESFETs; Parasitic capacitance; Propagation delay; Propagation losses;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.6089

Filename

6089