• DocumentCode
    1385827
  • Title

    Theory of the Monte Carlo method for semiconductor device simulation

  • Author

    Kosina, Hans ; Nedjalkov, Michail ; Selberherr, Siegfried

  • Author_Institution
    Inst. for Microelectron., Tech. Univ. Wien, Austria
  • Volume
    47
  • Issue
    10
  • fYear
    2000
  • fDate
    10/1/2000 12:00:00 AM
  • Firstpage
    1898
  • Lastpage
    1908
  • Abstract
    A brief review of the semiclassical Monte Carlo (MC) method for semiconductor device simulation is given, covering the standard MC algorithms, variance reduction techniques, the self-consistent solution, and the physical semiconductor model. A link between physically based MC methods and the numerical method of MC integration is established. The integral representations the transient and the steady-state Boltzmann equations are presented as well as the corresponding conjugate equations. The structure of the iteration terms of the Neumann series and their evaluation by MC integration is discussed. Using this formal mathematical approach, the standard algorithms and variety of new algorithms are derived. The basic ideas of the weighted ensemble MC and the MC backward algorithms are explained
  • Keywords
    Boltzmann equation; Monte Carlo methods; semiconductor device models; Boltzmann equation; Monte Carlo simulation; Neumann series; backward algorithm; carrier transport; iterative method; numerical integration; semiconductor device model; small-signal analysis; weighted ensemble algorithm; Analytical models; Boltzmann equation; Discrete event simulation; Distribution functions; Integral equations; Monte Carlo methods; Scattering; Semiconductor devices; Signal analysis; Steady-state;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.870569
  • Filename
    870569