Extensions of the Chalmers nonlinear HEMT and MESFET model

Author

Angelov, Iltcho ; Bengtsson, Lars ; Garcia, Mikael

Author_Institution

Dept. of Microwave Technol., Chalmers Univ. of Technol., Goteborg, Sweden

Volume

44

Issue

10

fYear

1996

fDate

10/1/1996 12:00:00 AM

Firstpage

1664

Lastpage

1674

Abstract

The ability to simulate temperature, dispersion, and soft-breakdown effects as well as a new α dependence was added to the Chalmers nonlinear model for high electron mobility transistor (HEMT´s) and metal semiconductor field-effect transistor (MESFET´s). DC, pulsed dc, low frequency (10 Hz-10 MHz), RF, and small signal S-parameter measurements (1-18 GHz) have been made on a large number of commercial HEMT and MESFET devices from different manufacturers in the temperature range 17-400 K in order to evaluate the validity of the model extensions

Keywords

S-parameters; Schottky gate field effect transistors; high electron mobility transistors; semiconductor device models; 1 to 18 GHz; 10 Hz to 10 MHz; 17 to 400 K; Chalmers nonlinear model; HEMT; MESFET; dispersion; high electron mobility transistor; metal semiconductor field-effect transistor; saturation voltage parameter; simulation; small signal S-parameter measurement; soft breakdown; temperature effect; Dispersion; FETs; HEMTs; MESFETs; MODFETs; Pulse measurements; RF signals; Radio frequency; Scattering parameters; Temperature dependence;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.538957

Filename

538957