DocumentCode
1386310
Title
Effect of gamma ray irradiation on the conduction mechanisms of radio-frequency-sputtered Ta2O5 films
Author
Wang, Ching-Wu ; Chen, Shih-Fang ; Lin, Ren-De
Author_Institution
Dept. of Electron. Eng., I-Shou Univ., Kaohsiung, Taiwan
Volume
47
Issue
4
fYear
2000
fDate
8/1/2000 12:00:00 AM
Firstpage
1704
Lastpage
1709
Abstract
The microstructural and electrical conduction properties of sputtered Ta2O5 films pre-irradiated and γ-ray-irradiated were systematically investigated. Analytical results revealed that the crystallinity and the leakage current of the pre-irradiated sample were effectively improved by raising the irradiation dose at low doses of irradiation [1 M~4 M rad(Ta2O5)]; however higher doses of γ-ray irradiation [>4 M rad(Ta2O5)] undesirably deteriorated the film crystallinity, yielding a larger leakage current. Such a result leads the Frenkel-Poole conduction (pre-irradiated sample) transformed to Schottky emission conduction process [low doses (1 M~4 M rad(Ta2O5)) of γ-ray-irradiated samples] and then gradually to the Frenkel-Poole conduction [high doses (>4 M rad(Ta2O5)) of γ-ray-irradiated samples] again
Keywords
Poole-Frenkel effect; Schottky effect; crystal microstructure; gamma-ray effects; leakage currents; sputtered coatings; tantalum compounds; Frenkel-Poole conduction; RF sputtered films; Schottky emission conduction; Ta2O5; conduction mechanisms; film crystallinity; gamma ray irradiation effect; leakage current; microstructural properties; Conductive films; Crystal microstructure; Crystallization; Dielectric devices; Dielectric films; Dielectric materials; Leakage current; Mechanical factors; Radio frequency; Semiconductor films;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.870864
Filename
870864
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