• DocumentCode
    1386878
  • Title

    Behaviour of CuInGaSe2 solar cells under light irradiation

  • Author

    Yanagisawa, T. ; Kojima, T. ; Koyanagi, T. ; Takahisa, K. ; Nakamura, K.

  • Author_Institution
    Electrotech. Lab., Tsukuba, Japan
  • Volume
    36
  • Issue
    19
  • fYear
    2000
  • fDate
    9/14/2000 12:00:00 AM
  • Firstpage
    1659
  • Lastpage
    1660
  • Abstract
    The behaviour of CIGS solar cells using a light irradiation rest is investigated. The conversion efficiency after the test increases by ~25%. This is mainly due to the increase in Isc and FF and the lowering of the series resistance. It is also shown that the performance of the diode decreases. Because the value of the diode factor increases from 1.9 to 2.4. In addition, the changes in the junction condition and generation of defects are suggested to be based on the measurement of electroluminescence and the photoabsorption current spectrum by the light below the sensitivity of the cell
  • Keywords
    copper compounds; electroluminescence; gallium compounds; indium compounds; photoconductivity; solar cells; ternary semiconductors; CuInGaSe2; cell sensitivity; conversion efficiency; defect generation; diode factor; electroluminescence; light irradiation; photoabsorption current spectrum; series resistance; solar cells;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20001176
  • Filename
    871176
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1386878