DocumentCode
1387119
Title
Experimental and analytical properties of 0.2 micron wide, multi-layer, GMR, memory elements
Author
Pohm, A.V. ; Beech, R.S. ; Daughton, J.M. ; Everitt, B.A. ; Chen, E.Y. ; Durlam, M. ; Nordquist, K. ; Zhu, T. ; Tehrani, S.
Author_Institution
Nonvolatile Electron., Eden Prairie, MN, USA
Volume
32
Issue
5
fYear
1996
fDate
9/1/1996 12:00:00 AM
Firstpage
4645
Lastpage
4647
Abstract
Memory elements 0.2 microns wide made from multilayer GMR material have been studied experimentally and analytically. When etched into narrow elements, the 12 to 15% material exhibits a memory mode with large outputs of ±8%. Analysis shows that the mode is suitable for multi-megabit die with high performance if yield can be achieved
Keywords
giant magnetoresistance; magnetic film stores; magnetic multilayers; magnetoresistive devices; 0.2 micron; multi-layer GMR memory element; multi-megabit die; yield; Cobalt; Colossal magnetoresistance; Copper alloys; Couplings; Giant magnetoresistance; Hydrogen; Magnetic analysis; Magnetic materials; Magnetic separation; Saturation magnetization;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.539105
Filename
539105
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