Perpendicular anisotropy in Co-Eu-EuS and Co-Eu-Tb-EuS exchange coupled sputtered films

Author

Wang, Lien-Chang ; Gambino, Richard J.

Author_Institution

Dept. of Mater. Sci. & Eng., State Univ. of New York, Stony Brook, NY, USA

Volume

32

Issue

5

fYear

1996

fDate

9/1/1996 12:00:00 AM

Firstpage

4076

Lastpage

4077

Abstract

In an effort to achieve a high data storage density media, Co-Eu-EuS and Co-Eu-Tb-EuS thin films were prepared by RF sputtering. These samples show strong perpendicular anisotropy and high coercivity fields which are required for high data storage density MO media. The compensation temperatures were raised to room temperature making them more useful in MO applications. Exchange coupled EuS which has a giant Kerr rotation (6°) at short wavelength (1.8 eV) may help to raise the Kerr rotation at short wavelength in these films

Keywords

Kerr magneto-optical effect; cobalt compounds; coercive force; europium compounds; exchange interactions (electron); ferrimagnetic materials; magnetic thin films; perpendicular magnetic anisotropy; sputtered coatings; terbium compounds; Co-Eu-EuS; Co-Eu-Tb-EuS; Kerr rotation; coercivity field; compensation temperature; data storage density; exchange coupled RF sputtered film; magneto-optic media; perpendicular anisotropy; Anisotropic magnetoresistance; Argon; Coercive force; Glass; Magnetic films; Perpendicular magnetic recording; Sputtering; Substrates; Temperature; X-ray diffraction;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.539268

Filename

539268