• DocumentCode
    1389718
  • Title

    Pulse height of MIPs in an n-side silicon microstrip detector after proton irradiation with a fluence of 1×1015 p cm-2

  • Author

    Gomez, A. ; Kroege, W. ; Nissen, T. ; Sadrozinski, H. E W ; Wichmann, R. ; Emes, J. ; Gilchriese, M.G.D. ; Siegrist, J. ; Wappler, E. ; Unno, Y. ; Ohsugi, T.

  • Author_Institution
    SCIPP, California Univ., Santa Cruz, CA, USA
  • Volume
    45
  • Issue
    3
  • fYear
    1998
  • fDate
    6/1/1998 12:00:00 AM
  • Firstpage
    327
  • Lastpage
    330
  • Abstract
    We have irradiated an n-side silicon microstrip detector to an equivalent high energy fluence of 1×1015 p cm-2 using 55 MeV protons. We determined the median pulse height to be 0.7 fC at a bias voltage of 180 V, and deduced a depletion region of about 80 μm
  • Keywords
    proton effects; silicon radiation detectors; 180 V; 55 MeV; MIP; bias voltage; depletion region; equivalent high energy fluence; median pulse height; n-side Si microstrip detector; n-side silicon microstrip detector; proton irradiation; pulse height; Detectors; Face detection; Microstrip; Particle beams; Particle measurements; Protons; Pulse measurements; Silicon; Strips; Voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.682402
  • Filename
    682402
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1389718