A 0.4- mu m gate-length AlGaAs/GaAs P-channel HIGFET with 127-mS/mm transconductance at 77 K

Author

Boissenot, Philippe ; Delhaye, Etienne ; Maluenda, José ; Frijlink, Peter ; Varin, Claude ; Deschamps, Françoise ; Lecuru, Isabelle

Author_Institution

Lab. d´´Electron. Philips, Limeil-Brevannes, France

Volume

11

Issue

7

fYear

1990

fDate

7/1/1990 12:00:00 AM

Firstpage

282

Lastpage

284

Abstract

WN-gate, p-channel AlGaAs-GaAs heterostructure insulated-gate field-effect transistors (HIGFETs) fabricated on a metalorganic vapor-phase epitaxy (MOVPE) wafer are discussed. A self-aligned Mg ion implantation (80 keV, 6*10/sup 13/ cm/sup -2/) annealed at 850 degrees C in an arsine atmosphere and the control of the SiO/sub 2/ sidewall dimensions allow the fabrication of p-channel HIGFETs with a gate length smaller than 0.5 mu m with low subthreshold current. P-channel HIGFETs with 0.4- mu m gate lengths exhibit extrinsic transconductances as high as 127 mS/mm at 77 K and 54 mS/mm at 300 K.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; insulated gate field effect transistors; ion implantation; magnesium; semiconductor technology; tungsten compounds; vapour phase epitaxial growth; 0.4 micron; 300 C; 77 K; 850 C; AlGaAs-GaAs; AsH/sub 3/ atmosphere; GaAlAs:Mg; HIGFETs; MOVPE; Mg ion implantation; SiO/sub 2/ sidewall; WN gate; gate length; heterostructure insulated-gate field-effect transistors; p-channel; self aligned ion implantation; semiconductors; transconductance; Annealing; Atmosphere; Epitaxial growth; Epitaxial layers; FETs; Fabrication; Gallium arsenide; Insulation; Ion implantation; Subthreshold current;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.56475

Filename

56475