Parameter correlation and modeling of the power-law relationship in MOSFET hot-carrier degradation

Author

Sun, Shih Wei ; Orlowski, Marius ; Fu, Kuan-Yu

Author_Institution

Motorola Inc., Austin, TX, USA

Volume

11

Issue

7

fYear

1990

fDate

7/1/1990 12:00:00 AM

Firstpage

297

Lastpage

299

Abstract

Correlation between the parameters A and n in the empirical hot-carrier degradation formula, parametric shift=A*t/sup n/, is reported for both n- and p-channel MOSFETs fabricated with various submicrometer processing technologies. Analysis of data indicates that A increases with a decreasing value of n, satisfying a simple exponential relationship, A= alpha *exp(- beta n), within the stress conditions considered. A phenomenological model to explain this relation is provided. Implications for device lifetime prediction under different hot-carrier injection stress conditions are also indicated.<>

Keywords

hot carriers; insulated gate field effect transistors; semiconductor device models; MOSFET hot-carrier degradation; device lifetime prediction; empirical hot-carrier degradation formula; hot-carrier injection stress conditions; modeling; n-channel MOSFETs; p-channel MOSFETs; parametric correlation; parametric shift; phenomenological model; power-law relationship; submicrometer processing technologies; CMOS technology; Degradation; Hot carriers; Human computer interaction; Laboratories; MOSFET circuits; Power MOSFET; Research and development; Stress; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.56480

Filename

56480