Transport properties and performance of CdZnTe strip detectors

Author

Tousignant, O. ; Hamel, L.A. ; Courville, J.F. ; Macri, J.R. ; Mayer, M. ; McConnell, M.L. ; Ryan, J.M.

Author_Institution

Montreal Univ., Que., Canada

Volume

45

Issue

3

fYear

1998

fDate

6/1/1998 12:00:00 AM

Firstpage

413

Lastpage

416

Abstract

We report on recent tests and computer simulations of a sub-millimeter pitch CdZnTe strip detector under study as a prototype imaging spectrometer. This paper presents new measurements and new analyses of previous measurements of the CdZnTe transport properties for this prototype and resolves previously reported quantitative discrepancies. Measurements of charge signals produced by α-rays are used to determine the transport properties. These are then used in the model to predict detection efficiencies and spectroscopic performance for γ-rays that are compared with the data

Keywords

II-VI semiconductors; cadmium compounds; gamma-ray detection; hole mobility; semiconductor counters; wide band gap semiconductors; zinc compounds; CdZnTe; CdZnTe transport properties; charge signals; detection efficiencies; prototype imaging spectrometer; spectroscopic performance; sub-millimeter pitch CdZnTe strip detector; Charge measurement; Computer simulation; Current measurement; Detectors; Prototypes; Signal resolution; Spectroscopy; Strips; Testing; Virtual prototyping;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.682418

Filename

682418