• DocumentCode
    1390229
  • Title

    A CMOS 5.37-mW 10-Bit 200-MS/s Dual-Path Pipelined ADC

  • Author

    Chai, Yun ; Wu, Jieh-Tsorng

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
  • Volume
    47
  • Issue
    12
  • fYear
    2012
  • Firstpage
    2905
  • Lastpage
    2915
  • Abstract
    A 10-bit 200-MS/s pipelined ADC was fabricated using a standard 65 nm CMOS technology. We propose a dual-path amplification technique for residue generation. We split the pipeline stage into a coarse-stage multiplying digital-to-analog converter (MDAC) and a fine-stage MDAC. The opamps for these two MDACs require different specifications. They can be designed and optimized separately. They are turned off when not in use to save power. We modify the operation of a pipeline stage to accommodate the dual-path scheme by using time-interleaving capacitor sets. Operating at 200 MS/s sampling rate, this ADC consumes 5.37 mW from a 1 V supply. It achieves a signal-to-noise-plus-distortion ratio (SNDR) better than 55 dB SNDR over the entire Nyquist band. The chip active area is 0.19 mm2 .
  • Keywords
    CMOS integrated circuits; analogue-digital conversion; digital-analogue conversion; CMOS technology; coarse-stage MDAC; dual-path amplification; dual-path pipelined ADC; fine-stage MDAC; multiplying digital-to-analog converter; power 5.37 mW; signal-to-noise-plus-distortion ratio; size 65 nm; voltage 1 V; word length 10 bit; Accuracy; CMOS integrated circuits; Capacitors; Noise measurement; Pipeline processing; Switches; Analog-to-digital conversion; pipeline processing; switched-capacitor amplification; switching circuits;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2012.2217872
  • Filename
    6392245