DocumentCode
1390229
Title
A CMOS 5.37-mW 10-Bit 200-MS/s Dual-Path Pipelined ADC
Author
Chai, Yun ; Wu, Jieh-Tsorng
Author_Institution
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Volume
47
Issue
12
fYear
2012
Firstpage
2905
Lastpage
2915
Abstract
A 10-bit 200-MS/s pipelined ADC was fabricated using a standard 65 nm CMOS technology. We propose a dual-path amplification technique for residue generation. We split the pipeline stage into a coarse-stage multiplying digital-to-analog converter (MDAC) and a fine-stage MDAC. The opamps for these two MDACs require different specifications. They can be designed and optimized separately. They are turned off when not in use to save power. We modify the operation of a pipeline stage to accommodate the dual-path scheme by using time-interleaving capacitor sets. Operating at 200 MS/s sampling rate, this ADC consumes 5.37 mW from a 1 V supply. It achieves a signal-to-noise-plus-distortion ratio (SNDR) better than 55 dB SNDR over the entire Nyquist band. The chip active area is 0.19 mm2 .
Keywords
CMOS integrated circuits; analogue-digital conversion; digital-analogue conversion; CMOS technology; coarse-stage MDAC; dual-path amplification; dual-path pipelined ADC; fine-stage MDAC; multiplying digital-to-analog converter; power 5.37 mW; signal-to-noise-plus-distortion ratio; size 65 nm; voltage 1 V; word length 10 bit; Accuracy; CMOS integrated circuits; Capacitors; Noise measurement; Pipeline processing; Switches; Analog-to-digital conversion; pipeline processing; switched-capacitor amplification; switching circuits;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.2012.2217872
Filename
6392245
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