• DocumentCode
    1392959
  • Title

    Dielectric Modulated Tunnel Field-Effect Transistor—A Biomolecule Sensor

  • Author

    Narang, Rakhi ; Saxena, Manoj ; Gupta, R.S. ; Gupta, Mridula

  • Author_Institution
    Dept. of Electron. Sci., Univ. of Delhi, New Delhi, India
  • Volume
    33
  • Issue
    2
  • fYear
    2012
  • Firstpage
    266
  • Lastpage
    268
  • Abstract
    In this letter, we propose a dielectric modulated double-gate tunnel field-effect transistor (DG-TFET)-based sensor for low power consumption label-free biomolecule detection applications. A nanogap-embedded FET-based biosensor has already been demonstrated experimentally, but a TFET-based biosensor has not been demonstrated earlier. Thus, a concept of TFET-based sensor is presented by analytical and simulation-based study. The results indicate better sensitivity toward two different effects (dielectric constant and charge of biomolecule) in comparison with a FET-based biosensor, and the additional advantages of CMOS compatibility, low leakage (low static power dissipation), and steep subthreshold slope make TFET an attractive alternative architecture for CMOS-based sensor applications.
  • Keywords
    bioelectric phenomena; biological techniques; electric sensing devices; field effect transistors; leakage currents; molecular biophysics; nanobiotechnology; permittivity; semiconductor device models; tunnel transistors; CMOS compatibility; CMOS-based sensor; DG-TFET-based sensor simulation; analytical model; biomolecule charge sensitivity; biomolecule sensor; dielectric constant sensitivity; dielectric modulated double-gate tunnel field-effect transistor; leakage current; low power consumption label-free biomolecule detection; nanogap cavity; static power dissipation; subthreshold slope; Biosensors; Cavity resonators; Dielectric constant; Logic gates; MOSFET circuits; PIN photodiodes; Sensitivity; Charge; DNA; dielectric modulated FET (DMFET); double-gate tunnel FET (DG-TFET); nanogap; sensor;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2011.2174024
  • Filename
    6097018