• DocumentCode
    1392975
  • Title

    Electromechanical Diode Cell for Cross-Point Nonvolatile Memory Arrays

  • Author

    Kwon, Wookhyun ; Jeon, Jaeseok ; Hutin, Louis ; Liu, Tsu-Jae King

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA
  • Volume
    33
  • Issue
    2
  • fYear
    2012
  • Firstpage
    131
  • Lastpage
    133
  • Abstract
    An electromechanical diode nonvolatile memory cell design is proposed for implementation of compact (4F2) cross-point memory arrays. The first prototype cells are demonstrated to operate with relatively low set/reset voltages and excellent retention characteristics and are multi-time programmable (with endurance exceeding 104 set/reset cycles).
  • Keywords
    micromechanical devices; programmable circuits; semiconductor diodes; semiconductor storage; compact 4F2 cross-point nonvolatile memory arrays; electromechanical diode nonvolatile memory cell design; multitime programmable cells; retention characteristics; set-reset voltages; Computer architecture; Force; Microprocessors; Nonvolatile memory; Prototypes; Random access memory; Voltage measurement; Cross-bar memory; cross-point memory; electro-mechanical device; nonvolatile memory;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2011.2174191
  • Filename
    6097020
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1392975