DocumentCode
1393205
Title
High repetition rate operation of bistable laser diodes
Author
Odagawa, T. ; Machida, T. ; Sanada, T. ; Nakai, K. ; Wakao, K. ; Yamakoshi, S.
Author_Institution
Fujitsu Lab. Ltd., Atsugi, Japan
Volume
138
Issue
2
fYear
1991
fDate
4/1/1991 12:00:00 AM
Firstpage
75
Lastpage
78
Abstract
The authors obtained a bistable laser diode with a saturable absorber operating at a high repetition rate. The laser was made with a semi-insulating layer which realized low carrier density in the reset region and low parasitic capacitance (3 pF over 300 μm). Low carrier density in the reset region where there is high differential gain (loss) reduces the carrier density changes caused by electrical reset and optical set signals. These enable flip-flop operation at a 2.5 Gb/s repetition rate
Keywords
flip-flops; optical bistability; optical logic; optical saturable absorption; semiconductor junction lasers; 2.5 Gbit/s; 3 pF; bistable laser diodes; carrier density changes; electrical reset; flip-flop operation; high differential gain; high repetition rate; low carrier density; low parasitic capacitance; optical set signals; repetition rate; reset region; saturable absorber; semi-insulating layer;
fLanguage
English
Journal_Title
Optoelectronics, IEE Proceedings J
Publisher
iet
ISSN
0267-3932
Type
jour
Filename
68362
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