A K-band GaAs MMIC Doherty power amplifier for point-to-point microwave backhaul applications

Author

Camarchia, Vittorio ; Donati Guerrieri, Simona ; Ghione, G. ; Pirola, Marco ; Quaglia, R. ; Moreno Rubio, Jorge Julian ; Loran, Brian ; Palomba, Fabio ; Sivverini, G.

Author_Institution

Dept. of Electron. & Telecommun., Politec. di Torino, Turin, Italy

fYear

2014

fDate

2-4 April 2014

Firstpage

1

Lastpage

3

Abstract

This work reports the design of a GaAs monolithic K-band Doherty power amplifier for point-to-point microwave backhaul applications. The design of the module is described, from the choice of the architecture based on power budget and gain requirements, to the analysis of the solutions adopted. The MMIC is expected to achieve 32.5 dBm output power in the 20.8-24 GHz band, PAE higher than 32% at saturation (20% at 6 dB output back-off) and gain higher than 10 dB.

Keywords

III-V semiconductors; MMIC power amplifiers; gallium arsenide; microwave links; GaAs; GaAs monolithic K-band Doherty power amplifier; K-band GaAs MMIC Doherty power amplifier; frequency 20.8 GHz to 24 GHz; gain requirements; point-to-point microwave backhaul applications; power budget; Computer architecture; Equivalent circuits; Gain; Gallium arsenide; MMICs; PHEMTs; Power generation; Doherty power amplifiers; Gallium arsenide; K-band; MMICs; microwave backhaul;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), 2014 International Workshop on

Conference_Location

Leuven

Type

conf

DOI

10.1109/INMMIC.2014.6815084

Filename

6815084