A silicon bipolar chipset for fiber-optic applications to 2.5 Gb/s

Author

McDonald, Mark D. ; Millicker, Daniel J. ; Nordblom, Steven W.

Author_Institution

Avantel Inc., Newark, CA, USA

Volume

9

Issue

5

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

664

Lastpage

672

Abstract

A silicon bipolar chip set for fiber-optic applications to 2.5 Gb/s, which consists of a transimpedance amplifier (TZA), a decision circuit (DEC), and a laser-diode driver (LDD), is presented. The TZA has 1.7 GHz bandwidth with 3.5 pA/√Hz equivalent input-current noise. The topology consists of a Darlington input stage and a class AB output stage. The laser-diode driver functions up to a 1.5 Gb/s data rate with 50 mA modulation and 50 mA prebias current levels. The decision circuit works up to a 2.5 Gb/s data rate, with 10 mV_pp input sensitivity. All the integrated circuits operate from a single 5 V power supply. A minimum of external components are required. A nonpolysilicon-emitter production process is used, with a minimum 20×30 mil die size

Keywords

bipolar integrated circuits; elemental semiconductors; optical communication equipment; silicon; 2.5 Gbit/s; Darlington input stage; Si; class AB output stage; decision circuit; fibre-optic communications; input sensitivity; laser-diode driver; silicon bipolar chipset; topology; transimpedance amplifier; Driver circuits; Fiber lasers; Fiber nonlinear optics; Optical amplifiers; Optical fiber cables; Optical receivers; Optical sensors; Silicon; Stimulated emission; Voltage;

fLanguage

English

Journal_Title

Selected Areas in Communications, IEEE Journal on

Publisher

ieee

ISSN

0733-8716

Type

jour

DOI

10.1109/49.87634

Filename

87634