Dose-rate and irradiation temperature dependence of BJT SPICE model rad-parameters

Author

Montagner, X. ; Briand, R. ; Fouillat, P. ; Schrimpf, R.D. ; Touboui, A. ; Galloway, K.F. ; Calvet, M.C. ; Calvel, P.

Author_Institution

Lab. IXL, Bordeaux I Univ., Talence, France

Volume

45

Issue

3

fYear

1998

fDate

6/1/1998 12:00:00 AM

Firstpage

1431

Lastpage

1437

Abstract

A method to predict low dose rate degradation of bipolar transistors using high dose-rate, high temperature irradiation is evaluated, based on an analysis of four new rad-parameters that are introduced in the BJT SPICE model. This improved BJT model describes the radiation-induced excess base current with great accuracy. The low-level values of the rad-parameters are good tools for evaluating the proposed high-temperature test method because of their high sensitivity to radiation-induced degradation

Keywords

SPICE; bipolar transistors; gamma-ray effects; semiconductor device models; BJT SPICE model; bipolar transistor; dose rate dependence; excess base current; high temperature testing; irradiation temperature dependence; radiation parameters; radiation-induced degradation; Bipolar transistors; Degradation; Ionizing radiation; Microwave transistors; Performance evaluation; SPICE; Telecommunications; Temperature dependence; Temperature sensors; Testing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.685219

Filename

685219