DocumentCode
1394867
Title
Single Event Transient Hardness of a New Complementary (npn 
pnp) SiGe HBT Technology on Thick-Film SOI
Author
Wilcox, Edward P. ; Phillips, Stanley D. ; Cheng, Peng ; Thrivikraman, Tushar ; Madan, Anuj ; Cressler, John D. ; Vizkelethy, Gyorgy ; Marshall, Paul W. ; Marshall, Cheryl ; Babcock, Jeff A. ; Kruckmeyer, Kirby ; Eddy, Robert ; Cestra, Greg ; Zhang, Benyo
Volume
57
Issue
6
fYear
2010
Firstpage
3293
Lastpage
3297
Abstract
We report heavy-ion microbeam and total dose data for a new complementary (npn + pnp) SiGe on thick-film SOI technology. Measured transient waveforms from heavy-ion strikes indicate a significantly shortened single-event-induced transient current, while maintaining the total dose robustness associated with SiGe devices. Heavy-ion broad-beam data confirm a reduced single event upset (SEU) cross-section in a high-speed shift register circuit.
Keywords
CMOS integrated circuits; Ge-Si alloys; dosimetry; heterojunction bipolar transistors; ion beam effects; radiation hardening (electronics); semiconductor thin films; silicon-on-insulator; Si; SiGe; SiGe devices; complementary (npn + pnp) SiGe HBT technology; heavy-ion broad beam data; heavy-ion microbeam; heavy-ion strikes; high-speed shift register circuit; shortened single-event-induced transient current; single event transient hardness; single event upset cross-section; thick-film SOI technology; total dose data; total dose robustness; Radiation hardening; Silicon germanium; Silicon on insulator technology; Single event upset; Radiation hardening; silicon on insulator; silicon-germanium; single event upset;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2010.2085014
Filename
5658070
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