DocumentCode
1394905
Title
Photon emission in deep submicron Si n-MOSFET
Author
Szelag, B. ; Balestra, F.
Author_Institution
Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble
Volume
33
Issue
23
fYear
1997
fDate
11/6/1997 12:00:00 AM
Firstpage
1990
Lastpage
1992
Abstract
The photon emission phenomenon has been studied in deep submicron MOSFETs (down to 0.1 μm) in a wide drain and substrate voltage range. The authors show that the number of emitted photon is still large for low voltage operation. Moreover, using the influence of a substrate bias, it is shown that the photon emission phenomenon is unambiguously associated with the substrate current and cannot be correlated to the gate current
Keywords
MOSFET; electroluminescence; elemental semiconductors; silicon; 0.1 micron; NMOSFET; Si; Si n-MOSFET; deep submicron MOSFETs; low voltage operation; photon emission phenomenon; substrate bias; substrate current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19971304
Filename
640485
Link To Document