DocumentCode
1394916
Title
Polarisation dependence of two-photon absorption generated by band-limited amplified spontaneous emission noise in silicon avalanche photodiodes
Author
O´Dowd, J.A. ; Guo, W.H. ; Flood, E. ; Lynch, M. ; Bradley, A. Louise ; Kilper, Daniel ; Donegan, J.F.
Author_Institution
Semicond. Photonics Group, Trinity Coll. Dublin, Dublin, Ireland
Volume
47
Issue
25
fYear
2011
Firstpage
1390
Lastpage
1391
Abstract
Two-photon absorption (TPA) generated by unpolarised band-limited amplified spontaneous emission (BL-ASE) noise is found to be within 5% of that generated by circularly polarised BL-ASE noise for silicon-based devices. A simple formula that describes the TPA generated by partially polarised BL-ASE noise as a function of material dichroism is given and verified experimentally.
Keywords
avalanche photodiodes; dichroism; elemental semiconductors; light polarisation; optical noise; photoexcitation; silicon; superradiance; two-photon processes; Si; circularly polarised noise; material dichroism; silicon avalanche photodiodes; silicon-based devices; two-photon absorption; unpolarised band-limited amplified spontaneous emission noise;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2011.3317
Filename
6099138
Link To Document