Electron irradiation effects in AlGaAs/GaAs single heterojunction bipolar transistors

Author

Sarkar, Aveek ; Subramanian, S. ; Goodnick, S.M.

Author_Institution

Sun Microsyst., Sunnyvale, CA, USA

Volume

47

Issue

11

fYear

2000

fDate

11/1/2000 12:00:00 AM

Firstpage

2024

Lastpage

2030

Abstract

The effects of high-energy electron irradiation on the dc characteristics of polyimide passivated AlGaAs/GaAs HBTs of different base thicknesses and different emitter sizes are investigated. The devices show gain degradation for doses greater than 10¹⁵ e/cm². The gain degradation of the passivated devices decreases (1) with increase in the base thickness, (2) with increase in the perimeter to area ratio of the emitter, and (3) with increase in the base current. Our results suggest that the observed gain degradation due to electron irradiation is mainly caused by an increase in the emitter-base junction space charge region recombination

Keywords

III-V semiconductors; aluminium compounds; electron beam effects; electron-hole recombination; gallium arsenide; heterojunction bipolar transistors; passivation; space-charge-limited conduction; AlGaAs-GaAs; AlGaAs/GaAs; base current; base thicknesses; dc characteristics; electron irradiation effects; emitter sizes; emitter-base junction space charge region recombination; gain degradation; perimeter to area ratio; polyimide passivation; single heterojunction bipolar transistors; Carbon dioxide; Degradation; Electron emission; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Molecular beam epitaxial growth; Radiation effects; Silicon; Space charge;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.877162

Filename

877162