Low electric field hole impact ionization coefficients in GaInAs and GaInAsP

Author

Shamir, N. ; Ritter, D.

Author_Institution

Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel

Volume

21

Issue

11

fYear

2000

Firstpage

509

Lastpage

511

Abstract

The electric field dependence of the hole impact ionization coefficients in Ga/sub 0.47/In/sub 0.53/As and Ga/sub 0.28/In/sub 0.72/As/sub 0.61/P/sub 0.39/ was obtained from the electrical characteristics of p-n-p heterojunction bipolar transistors. The anomalous low field behavior of the electron impact ionization coefficients in these materials was not observed for the case of holes. Within the accuracy of our measurements me observed no change in the hole ionization rates in the temperature range of 20 to 120/spl deg/C.

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; impact ionisation; indium compounds; semiconductor device breakdown; 20 to 120 C; Early effect; Ga/sub 0.28/In/sub 0.72/As/sub 0.61/P/sub 0.39/; Ga/sub 0.47/In/sub 0.53/As; GaInAs; GaInAsP; HBT breakdown behavior; electric field dependence; electrical characteristics; electron impact ionization coefficients; hole impact ionization coefficients; hole ionization rates; p-n-p heterojunction bipolar transistors; Contact resistance; Electric breakdown; Electric resistance; Electric variables; Electrons; Heterojunction bipolar transistors; Impact ionization; Temperature dependence; Tunneling; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.877192

Filename

877192