Source identification and control of 1/f noise in AlGaAs/GaAs HBTs by using an on-ledge Schottky diode

Author

Ma, Pingxi ; Chang, M.F. ; Zampardi, Peter ; Canfield, Philip ; Sheu, Jerry ; Li, G.P.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

21

Issue

11

fYear

2000

Firstpage

528

Lastpage

530

Abstract

Our experimental results indicate that the 1/f noise spectra density of HBTs is strongly influenced by the emitter ledge potential. By biasing an on-ledge Schottky diode, we can externally control the ledge potential and alter HBT\´s 1/f noise spectra density and its dependence on the base current. When biasing the on-ledge diode at V/sub L/V/sub BE/, the 1/f noise spectra density is found to decrease (about 10 dB) and exhibit virtually no dependence on I/sub B/ (from I/sub B//sup 1.42/ to I/sub B//sup 0.18/). These findings help us identify the sources of the 1/f noise and create a novel four-terminal HBT (with an extra ledge electrode) for extremely low 1/f noise RF transceiver applications.

Keywords

1/f noise; III-V semiconductors; Schottky diodes; UHF bipolar transistors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; passivation; semiconductor device noise; 1/f noise control; 1/f noise source identification; 1/f noise spectra density; AlGaAs-GaAs; AlGaAs/GaAs HBTs; bias voltage dependence; emitter ledge potential; equivalent circuit model; extremely low 1/f noise RF transceiver applications; four-terminal HBT; ledge electrode; ledge potential control; on-ledge Schottky diode; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit noise; Passivation; Radio frequency; Schottky diodes; Semiconductor device noise; Semiconductor diodes; Signal to noise ratio; Transceivers;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.877200

Filename

877200